Моделирование исходно открытого гетеропереходного полевого транзистора на основе нитрида галлия

Abstract

AlGaN ternary alloys with a band gap of 3.4 to 6.2 eV are promising materials for the construction of various electronic devices: diodes, transistors, lasers, microwave circuits. Replacing silicon with GaN allows several times to increase the operating temperature, the cutoff frequency, and to reduce several times the switching and conduction losses in power devices. A necessary element in the development of new electronic devices is computer modeling of physical processes in them. In this work, a model of heterojunction field-effect transistor based on AlxGax-1N was developed.