Управление дефектностью высоколегированных кремниевых структур шумовых диодов

Abstract

The types of defects in noise diode (ND) structures have been experimentally established, which mainly affect their noise properties. The determined energy values allow one to establish the presence of background impurities (copper and iron) and state that one of the causes of noise is the ionization of technological impurities that form the basis of microplasmas. It was found that the highest yield of suitable ND can be achieved by purposefully creating dislocations in the substrate by making parallel reflow zones on the back side of the plate by a laser, followed by annealing the structures. It has been shown that annealing of ND, combined with sealing in the presence of nitrogen and oxygen, reduces the concentration of electrically active impurity atoms, which increases the concentration of thermal donors and leads to the formation of stable precipitates of silicon with oxygen. As a result, the spectral density of noise increases with a significant (more than 1,7 times) reduces its unevenness. In addition, the variation of the basic electrophysical parameters of ND is 1,3–2 times smaller.