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Computer Modeling the Excitonic Reflection and Photoluminescence Spectra of GaN Epitaxial Layers
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Дата издания
1999Издательство
BPIБиблиографическое описание
Computer Modeling the Excitonic Reflection and Photoluminescence Spectra of GaN Epitaxial Layers / Y. Rakovich [and etc.] // International Conference on Neural Networks and Artificial Intelligence ICNNAI’99 = Международная конференция по нейронным сетям и искусственному интеллекту ICNNAI’99 : Proceedings, Brest, Belarus, 12–15 October 1999 / Brest Polytechnic Institute, Department of Computers and Laboratory of Artificial Neural Networks, Belarus Special Interest Group of International Neural NetWork Society, International Neural NetWork Society, Belarusian State University of Informatics and Radioelectronics (Belarus), Belarusian Academy of Sciences, Institute of Engineering Cybemetics (Belarus), Universidad Politechnica de Valencia (Spain), Institute of Computer Information Technologies (Ukraine, Ternopil) ; ed. V. Golovko. – Brest : BPI, 1999. – P. 204–209.Аннотация
Photoluminescence (PL) and reflection excitonic spectra o f GaN single layer grown on sapphire substrate by MOVPE were modeled with aim to estimate a basie parameters o f free A- and B- excitons. The calculations were performed in the frame o f two-oscillator model for dielectric function e(E). Three layered model o f crystal was used for fitting o f reflection spectrum which was measured at T=80K. In this way the dead layer thickness d=6 nm, resonance energies Eа=3.4916 eV and Eв = 3.5008 eV as well as the broadening parameters Га = 5.27 meV and Гв = 7.14 meV of the free excitons were obtained. These parameters were used then for fitting of PL spectra in assumption o f the thermal equilibrium for excitons taking into account the self-absorption of resonance emission. The values of diffusion coefficients Dа =0.3 cm²/s, Dв = 0.1 cm²/s and exciton lifetimes Ƭa = 37 ps, Ƭв = 17 ps were estimated.
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