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    • Computer Modeling the Excitonic Reflection and Photoluminescence Spectra of GaN Epitaxial Layers 

      Rakovich, Y.; Tarasjuk, N. P.; Gladyshchuk, A. A.; Lucenko, E. V.; Yablonskii, G. P.; Heuken, M.; Heime, K. (BPI, 1999)
      Photoluminescence (PL) and reflection excitonic spectra o f GaN single layer grown on sapphire substrate by MOVPE were modeled with aim to estimate a basie parameters o f free A- and B- excitons. The calculations were performed in the frame o f two-oscillator model for dielectric function e(E). Three ...